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Short channel effects in regioregular poly(thiophene) thin film transistors

 

The effects of the physical channel length on the current-voltage characteristics of regioregular poly(thiophene)-based thin-film transistors (TFTs) were examined. Coplanar transistors with fully patterned electrodes on insulating substrates and with a common gate structure on thermal oxide were fabricated. The output characteristics of TFTs with channel lengths shorter than 10 mm showed the presence of a parasitic contact resistance and the lack of current saturation. The origin of these non-idealities was examined by the application of models that included self-heating effects and the breakdown of the channel region at high applied biases. The analysis suggests that carriers can break away from the channel at high bias voltages and flow through a bulk region of the semiconducting film leading to higher currents than otherwise expected.

 
 
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citation

Chabinyc, M.; Lu, J. P.; Street, R. A.; Wu, Y.; Liu, P.; Ong, B. S. Short channel effects in regioregular poly(thiophene) thin film transistors. Journal of Applied Physics. 2004 August 15; 96 (4): 2063-2070.

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Copyright © American Institute of Physics, 2004. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at http://link.aip.org/link/doi/10.1063/1.1766411.