Persistent photoconductivity effects in printed n-channel organic transistors
Persistent photoconductivity of top-gate n-type organic transistors is investigated, as the irradiation of light leads to a negative shift in transistor threshold voltage and an increase in subthreshold current. These light-induced effects are enhanced when the gate is negatively biased during the light irradiation, and the recovery process is faster at 60°C than at 25°C. After storage in dark, full recovery is obtained for a transistor printed with a neat semiconductor, whereas for the device printed with a solution of the same semiconductor mixed with an insulator, only partial recovery is observed after four days. Other stress conditions (irradiation with a positive gate bias, irradiation without bias, and bias under dark) do not change the threshold voltage or the subthreshold current significantly. We attribute this photo phenomenon to the holes trapped and released at the dielectric/semiconductor interface and a smaller number of positive fixed charges generated in the bulk of the semiconductor layer.
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Ng, T.; Fujieda, I.; Street, R. A.; Veres, J. Persistent photoconductivity effects in printed n-channel organic transistors. Journal of Applied Physics. 2013; 113 (9): 094506.
Copyright © American Institute of Physics, 2013. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at http://dx.doi.org/10.1063/1.4794097.