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Nitride VECSELs as light sources for biomedical applications

 

In-well-pumped blue InGaN/GaN vertical-external-cavity surface-emitting lasers are demonstrated. The laser structures were grown on bulk GaN substrates by using metal-organic vapor phase epitaxy near atmospheric pressure. The active zone consisted of up to 20 InGaN quantum wells distributed in a resonant periodic gain configuration. High-reflectivity dielectric distributed Bragg-reflectors were used as mirrors. Laser emission with a single longitudinal mode at 440 nm was achieved by exclusively pumping the quantum wells with the 384 nm emission line of a dye-/N2-laser.

 
citation

Wunderer, T.; Northrup, J. E.; Yang, Z.; Teepe, M. R.; Johnson, N. M.; Rotella, P.; Wraback, M. Nitride VECSELs as light sources for biomedical applications. Invited talk for Conference on Lasers and Electro-Optics (CLEO); 2013 June 9-14; San Jose, CA, USA.