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Effects of mechanical strain on A-Si:H TFT electrical stability

 

The electrical stability of hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) on flexible substrates is characterized under uniaxial tension and compression applied by bending. TFTs under compression(tension) experience enhanced(reduced) degradation under moderate constant-voltage gate bias (<2MV/cm) compared to without applied strain, with ~5% more(less) reduction in IDS after 104s. After removal of bias stress, TFTs released similar percentages of trapped charge over time regardless of applied strain conditions. The stretched-hyperbola model for defect creation in a-Si:H TFTs was fitted to measurement data and used to predict how applied strain can affect TFT lifetime in practical applications.

 
 
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citation

Chow, M. J.; Fomani, A.; Moradi, M.; Chaji, G.; Lujan, R. A.; Wong, W. S. Effects of mechanical strain on A-Si:H TFT electrical stability. Applied Physics Letters. 2013 June 10; 102 (23): 233509.

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Copyright © American Institute of Physics, 2013. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at http://link.aip.org/link/doi/10.1063/1.4811271.