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Electroabsorption spectroscopy - direct determination of the strong piezoelectric field in InGaN/GaN heterostructure diodes
- 4th International Conference on Nitride Semiconductors
citation
Kiesel, P. ; Renner, F.; Kneissl, M. A. ; Johnson, N. M. ; Doehler, G. Electroabsorption spectroscopy - direct determination of the strong piezoelectric field in InGaN/GaN heterostructure diodes. Papers from the 4th International Conference on Nitride Semiconductors; 2001 July 16-20; Denver, CO. In Physica Status Solidi (a). 2001; 188 (1): 131-134.
PARC authors
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