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TECHNICAL PUBLICATIONS:
Influence of microstructure on the carrier concentration in Mg-doped GaN films
- Applied Physics Letters
citation
Romano, L. T. ; Kneissl, M. A. ; Northrup, J. E. ; Van de Walle, C. G. ; Treat, D. W. Influence of microstructure on the carrier concentration in Mg-doped GaN films. Applied Physics Letters. 2001 October 22; 79 (17): 2734-2736.
publications
Advances in blue laser diode development for high resolution printing
Performance characteristics of cw InGaN multiple-quantum-well laser diodes
CW operation of InGaN MQW laser diodes
Design and performance of asymmetric waveguide nitride laser diodes
Phase separation in InGaN multiple quantum wells annealed at high nitrogen pressures
Performance and optical gain characteristic of InGaN multiple quantum well laser diodes.
Vibrational spectroscopy of GaN:Mg under pressure
