Structural characterization of high quality GaN films grown by hydride vapor phase epitaxy

• Materials Research Society Spring Meeting

citation

Romano, L. T. ; Krusor, B. S. ; Goetz, W .; Johnson, N. M. ; Molnar, R. J. ; Brown, E. R. Structural characterization of high quality GaN films grown by hydride vapor phase epitaxy. Spring 1996 Meeting of the Materials Research Society; 1996 April 8; San Francisco, CA.