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Structural characterization of high quality GaN films grown by hydride vapor phase epitaxy

 
 
citation

Romano, L. T. ; Krusor, B. S. ; Goetz, W .; Johnson, N. M. ; Molnar, R. J. ; Brown, E. R. Structural characterization of high quality GaN films grown by hydride vapor phase epitaxy. Spring 1996 Meeting of the Materials Research Society; 1996 April 8; San Francisco, CA.