The effect of growth parameters on the quality of GaN thick films grown by hydride vapor phase epitaxy

• Materials Research Society Spring Meeting

citation

Molnar, R. J. ; Brown, E. R. ; Goetz, W .; Romano, L. T. ; Johnson, N. M. The effect of growth parameters on the quality of GaN thick films grown by hydride vapor phase epitaxy. Spring 1996 Meeting of the Materials Research Society; 1996 April 8; San Francisco, CA.