Comparison of heteroepitaxial growth using hydride and solid sources: atomic scale characterization of the interaction of As4, AsH3 and PH3 with Si surfaces

• International Symposium on Atomically Controlled Surfaces and Interfaces

citation

Bringans, R. D. ; Kipp, L. ; Biegelsen, D. K. ; Swartz, L. E. ; Northrup, J. E. Comparison of heteroepitaxial growth using hydride and solid sources: atomic scale characterization of the interaction of As4, AsH3 and PH3 with Si surfaces. International Symposium on Atomically Controlled Surfaces and Interfaces; 1995 October 12; Raleigh, NC.