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Disordering of InGaN/GaN superlattices after high-pressure annealing

 
 
citation

McCluskey, M. D. ; Romano, L. T. ; Krusor, B. S. ; Hofstetter, D. ; Johnson, N. M. Disordering of InGaN/GaN superlattices after high-pressure annealing. MRS Symosium (Fall 1998); 1998 December 1; Boston, MA. In MRS Internet Journal of Nitride Semiconductor Research. 1999; 4: U300-U305.