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Tensile-strained AlGaAsP- and InGaAsP-(AlGa)0.5In0.5P quantum well laser dodes for TM polarized emission in the wavelength range 650< λ<850nm.

 

TM-polarized laser emission is demonstrated at wavelengths longer than 650 nm, for (AlGa)0.5In0.5P-based laser diodes. These structures contain tensile-strained AlGaAsP or InGaAsP quantum well active regions, which are capable of spanning a wavelength range of roughly 650-850 nm, for TM-mode lasers on GaAs substrates. This represents an extension of the wavelength range available from typical GaInP-(AlGa)0.5In0.5P lasers, where the requirement for biaxial tension limits the TM-mode wavelengths to less than 650 nm. In addition, compared to AlGaAs confining structures, the high-bandgap (AlGa)0.5In0.5P confinement structure used here makes AlGaAs(P) active regions feasible at shorter wavelengths, with good performance maintained for 670<λ<700 mn. Likewise, the wavelength range 700<λ<750 nm, where AlGaAs laser characteristics are diminished, becomes accessible using these materials.

 
citation

Bour, D. P. ; Treat, D. W. ; Beernink, K. J. ; Thornton, R. L. ; Paoli, T. L. ; Bringans, R. D. Tensile-strained AlGaAsP- and InGaAsP-(AlGa)0.5In0.5P quantum well laser dodes for TM polarized emission in the wavelength range 650