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Structural characterization of thick GaN films grown by hydride vapor phase epitaxy

 
 
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Romano, L. T. ; Krusor, B. S. ; Anderson, G. B. ; Bour, D. P. ; Molnar, R. J. ; Maki, P. Structural characterization of thick GaN films grown by hydride vapor phase epitaxy. Gaskill, D. K. ed. III-Nitride, SiC and Diamond Materials for Electronic Devices, Proceedings of the Materials Research Society Spring Symposium; 1996 April 8-12; San Francisco. Pittsburgh: MRS; 1996: 245-250.