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A donor-like deep level defect in Al(0.12)Ga(0.88)N characterized by capacitance transient spectroscopies

 
 
citation

Goetz, W .; Johnson, N. M. ; Bremser, M. D. ; Davis, R. F. A donor-like deep level defect in Al(0.12)Ga(0.88)N characterized by capacitance transient spectroscopies. Applied Physics Letters. 1996 October 14; 69(16): 2379-2381.