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Thickness dependence of electronic properties of GaN epi-layers

 
 
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Goetz, W .; Walker, J. ; Romano, L. T. ; Johnson, N. M. Thickness dependence of electronic properties of GaN epi-layers. Ponce, F. A. ; Moustakas, T.D.; Akasaki, I.; Monemar,B.A., eds. III-V nitrides, Proceedings of the Materials Research Society symposium; 1996 December 2-6; Boston, MA. Pittsburgh, PA: Materials Research Society; 1997; 449: 525-530.