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Homoepitaxy of GaN on polished bulk single crystals by MOCVD

  • Material Research Society
 
 
citation

Ponce, F. A. ; Bour, D. P. ; Goetz, W .; Johnson, N. M. ; Helava, H. I. Homoepitaxy of GaN on polished bulk single crystals byMOCVD. Material Research Society; 1995 November 27; Boston, MA.

PARC author

Noble Johnson

 

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