Deep level defects in GaN characterized by capacitance transient spectroscopies

• Materials Research Society 1995 Spring Meeting

citation

Goetz, W .; Johnson, N. M. ; Street, R. A. ; Amano, H. ; Akasaki, I. Deep level defects in GaN characterized by capacitance transient spectroscopies. Materials Research Society Symposium Proceedings, Symposium held at the Spring Meeting of the Materials Research Society; 1995 April 17-25; San Francisco, CA. Warrendale, PA: Materials Research Society, 1995; 378: 491-496.