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Deep level defects in GaN characterized by capacitance transient spectroscopies

 
 
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Goetz, W .; Johnson, N. M. ; Street, R. A. ; Amano, H. ; Akasaki, I. Deep level defects in GaN characterized by capacitance transient spectroscopies. Materials Research Society Symposium Proceedings, Symposium held at the Spring Meeting of the Materials Research Society; 1995 April 17-25; San Francisco, CA. Warrendale, PA: Materials Research Society, 1995; 378: 491-496.