Homoepitaxy of GaN on polished bulk single crystals by metalorganic chemical vapor deposition

• Applied Physics Letters

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citation

Ponce, F. A. ; Bour, D. P. ; Goetz, W. K. ; Johnson, N. M. ; Heleva, H. I.; Grzegory, I.; Jun, J. ; Porowski, S. Homoepitaxy of GaN on polished bulk single crystals by metalorganic chemical vapor deposition. Applied Physics Letters. 1996 February 12; 68 (7): 917-919.