Integration of InGaN laser diodes with dissimilar substrates by laser lift-off

• Fall 2000 Meeting of the Materials Research Society

citation

Wong, W. S. ; Kneissl, M. A. ; Mei, P. ; Treat, D. W. ; Teepe, M. R. ; Johnson, N. M. Integration of InGaN laser diodes with dissimilar substrates by laser lift-off. GaN and Related Alloys - 2000; Symposium Proceedings of the Fall 2000 Meeting of the Materials Research Society; 2000 November 27 - December 1; Boston; MA. Warrendale, PA: MRS; 2001; 639: G12.2.1-5.