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Materials characterization of optically pumped InGaN/GaN lasers by far field measurements and by Fourier analysis of the emission spectrum

 
 
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Hofstetter, D. ; Thornton, R. L. ; Romano, L. T. ; Bour, D. P. ; Johnson, N. M. Materials characterization of optically pumped InGaN/GaN lasers by far field measurements and by Fourier analysis of the emission spectrum. Ponce, F. A. , et al., editors. Nitride Semiconductors Symposium, Materials Research Society Symposium Proceedings; 1997 December 1-5; Boston, MA. Warrendale, PA: Materials Research Society, 1998; 482: 1059-1064.