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Phase separation in annealed InGaN multiple quantum wells
- International Conference on Nitride Semiconductors
citation
Romano, L. T. ; McCluskey, M. D. ; Krusor, B. S. ; Bour, D. P. ; Chua, C.; Brennan, S. ; Yu, K. M. Phase separation in annealed InGaN/GaN multiple quantum wells. Second International Conference on Nitride Semiconductors; 1997 Oct 27-31; Tokushima, Japan. In Journal of Crystal Growth; 1998 June; 189-190: 33-36.
PARC authors
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