MOCVD growth and characterization of AlGaInN heterostructures and laser diodes

• European MRS Spring Meeting

We demonstrate room temperature, pulsed, current-injected operation of InGaAlN heterostructure laser diodes with mirrors fabricated by chemically assisted ion beam etching. The multiple quantum well devices were grown by organo-metallic vapor phase epitaxy on c-face sapphire substrates. The emission wavelengths of the gain-guided laser diodes were ~400 nm. The lowest threshold current density obtained was 6 kA cm-2 with maximum output powers of 50 mW per facet. Optically-pumped distributed-feedback laser operation was also achieved.

citation

Bour, D. P. ; Kneissl, M .; Hofstetter, M.; Romano, L. T. ; McCluskey, M.; Van de Walle, C. G. ; Krusor, B. S. ; Dunrowicz, C.; Donaldson, R.; Walker, J. ; Johnson, N. M. MOCVD growth and characterization of AlGaInN heterostructures and laser diodes. Materials Science and Engineering B (Papers from the European MRS Spring Meeting, Symposium L: Nitrides and Related Wide Band Gap Materials; 1998 June 16-19; Strasbourg, France). 1999 May 6; 59 (1-3): 33-38.