Material characterizations for III-Nitride based light emitters

• SPIE Photonics West Symposium on Optoelectronics, Light-Emitting diodes: Research, Manufacturing, and Applications II

citation

Kneissl, M .; Bour, D. P. ; Romano, L. T. ; Krusor, B. S. ; McCluskey, M.; Goetz, W .; Johnson, N. M. Material characterization for III-nitride based light emitters. Light-Emitting Diodes: Research, Manufacturing, and Applications II; Proceedings of the SPIE; 1998 January 28-29; San Jose, CA. Bellingham, WA: SPIE - The International Society for Optical Engineering; 1998; 3279: 69-76.