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Characteristics of InGaN/AlGaN multiple quantum well laser diodes

 

We demonstrate room-temperature pulsed current-injected operation of InGaAlN heterostructure laser diodes with mirrors fabricated by chemically assisted ion beam etching. The multiple-quantum-well devices were grown by organometallic vapor phase epitaxy on c-face sapphire substrates. The emission wavelengths of the gain-guided laser diodes were in the range from 419 to 432 nm. The lowest threshold current density obtained was 20 kA/cm2 with maximum output powers of 50 mW. Longitudinal Fabry-Perot modes are clearly resolved in the high-resolution optical spectrum of the lasers, with a spacing consistent with the cavity length. Cavity length studies on a set of samples indicate that the distributed losses in the structure are on the order of 30-40 cm-1.

 
citation

Bour, D. P. ; Kneissl, M. A. ; Romano, L. T. ; McCluskey, M. D. ; Van de Walle, C. G. ; Krusor, B. S. ; Donaldson, R. M. ; Walker, J. ; Dunrowicz, C.; Johnson, N. M. Characteristics of InGaN/AlGaN multiple quantum well laser diodes. IEEE Journal of Selected Topics in Quantum Electronics. 1998 May-June; 4 (3): 498-504.