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Low-threshold in AlGaAs vertical cavity suface-emitting laser arrays using transparent contacts.

 

We present top-emitting all-epitaxial planar laterally oxidized vertical-cavity surface-emitting lasers employing transparent indium-tin-oxide electrodes. The transparent contacts facilitate device fabrication and offer significantly denser device packing than similar planar laterally oxidized structures using metal contacts. The InAlGaAs-based devices operate at a wavelength of 817 nm with a minimum threshold current of 175 µA.

 
citation

Chua, C. L. ; Thornton, R. L. ; Treat, D. W. ; Kneissl, M .; Dunnrowicz, C. Low-threshold InAlGaAs vertical-cavity surface-emitting laser arrays using transparent contacts. Applied Physics Letters. 1998 March 2; 72 (9): 1001-1003.