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Two-section InGaN multiple-quantum-well laser diode with integrated electro-absorption modulator

  • Applied Physics Letters
 
 
citation

Kneissl, M. A. ; Paoli, T. L. ; Kiesel, P. ; Treat, D. W. ; Teepe, M. R. ; Miyashita, N. ; Johnson, N. M. Two-section InGaN multiple-quantum-well laser diode with integrated electro-absorption modulator. Applied Physics Letters. 2002; 80 (18): 3283-3285.

PARC authors

Peter Kiesel
Mark Teepe
Noble Johnson

 

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