home › resources & publications › quantitative analysis of the polarization fields and absorption changes in ingan/gan quantum wells with electroabsorption spectroscopy
TECHNICAL PUBLICATIONS:
Quantitative analysis of the polarization fields and absorption changes in InGan/GaN quantum wells with electroabsorption spectroscopy
- Applied Physics Letters
citation
Renner, F.; Kiesel, P. ; Doehler, G.; Kneissl, M. A. ; Van de Walle, C. G. ; Johnson, N. M. Quantitative analysis of the polarization fields and absorption changes in InGan/GaN quantum wells with electroabsorption spectroscopy. Applied Physics Letters. 2002; 81 (3): 490-492.
PARC authors
related publications
Direct determination of the built-in polarization field in InGaN/GaN quantum wells
Quantitative analysis of absorption and field-induced absorption changes in InGaN/GaN quantum wells
Performance characteristics of cw InGaN multiple-quantum-well laser diodes
Effects of an electrically conducting layer at the zinc oxide surface
Analysis of a conducting channel at the native zinc oxide surface
Analysis of the objectionable n-background conductivity in ZnO crystals
