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optoelectronics

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Entering an emerging product market through IP and new technology capability transfer

Dowa had significant materials expertise and in-house R&D, but lacked the knowledge to manufacture and develop an emerging product category of LED-based products.

2014

2013

In-well pumped blue GaN-based vertical-external-cavity surface-emitting lasers

Japanese Journal of Applied Physics, a special issue on Recent Advances in Nitride Semiconductors

August 2013

2012

LED and Laser Diode Services

1 January 2012

PARC offers a superior combination of world-class technical expertise, fully integrated on-site development and prototyping infrastructure, and the ability to develop new processes in a commercial MOCVD reactor that are readily transferable to high-volume full-production systems.

2011

InAlGaN optical emitters: laser diodes with non-epitaxial cladding layers and ultraviolet light-emitting diodes

Invited talk at Gallium Nitride Materials & Devices VI, SPIE Photonics West 2011

24 January 2011

2010

Nitride laser diodes with non-epitaxial cladding layers

IEEE Photonics Technology Letters

March 2010

Lasing of semi-polar InGaN/GaN(1122) heterostructures grown on m-plane sapphire substrates

SPIE Photonics West 2010: Novel In-Plane Semiconductor Lasers IX

25 January 2010

2009

Metal-clad nitride semiconductor laser diodes

8th International Conference on Nitride Semiconductors

22 October 2009

Optically-pumped lasing of semipolar InGaN/GaN(1122) heterostructures

International Conference on Nitride Semiconductors (ICNS 8)

2009 October 18

Silver-clad nitride semiconductor laser diode

Applied Physics Letters

26 January 2009

2004

1997