home › resources & publications › by competency - optoelectronics
optoelectronics
case studies
Entering an emerging product market through IP and new technology capability transfer
Dowa had significant materials expertise and in-house R&D, but lacked the knowledge to manufacture and develop an emerging product category of LED-based products.
information sheets
1 January 2012
PARC offers expertise and advanced designs for compact optofluidic systems that enable point-of-need diagnostics. PARC’s “spatially modulated emission” technique can reduce the cost and size of today’s commercially available flow cytometers while maintaining testing speed and high signal-to-noise discrimination.
1 January 2012
PARC offers a superior combination of world-class technical expertise, fully integrated on-site development and prototyping infrastructure, and the ability to develop new processes in a commercial MOCVD reactor that are readily transferable to high-volume full-production systems.
technical publications
In-well pumped blue GaN-based vertical-external-cavity surface-emitting lasers
Japanese Journal of Applied Physics, a special issue on Recent Advances in Nitride Semiconductors
August 2013
Applied Physics Letters
9 January 2012
In-well pumping of InGaN/GaN vertical-external-cavity surface-emitting lasers
Applied Physics Letters
November 2011
Pseudomorphically grown ultraviolet C photopumped lasers on bulk AlN substrates
Applied Physics Express
10 August 2011
Invited talk at Gallium Nitride Materials & Devices VI, SPIE Photonics West 2011
24 January 2011
Advances in group III-nitride-based deep UV light-emitting diode technology
Semiconductor Science & Technology
January 2011
Applied Physics Letters
25 October 2010
Optically-pumped lasing of semipolar InGaN/GaN(1122) heterostructures
physica status solidi (c)
July 2010
Nitride laser diodes with non-epitaxial cladding layers
IEEE Photonics Technology Letters
March 2010
Lasing of semi-polar InGaN/GaN(1122) heterostructures grown on m-plane sapphire substrates
SPIE Photonics West 2010: Novel In-Plane Semiconductor Lasers IX
25 January 2010
Metal-clad nitride semiconductor laser diodes
8th International Conference on Nitride Semiconductors
22 October 2009
Optically-pumped lasing of semipolar InGaN/GaN(1122) heterostructures
International Conference on Nitride Semiconductors (ICNS 8)
2009 October 18
Hybrid integration of GaAs-based VCSEL array with amorphous silicon sensor
IEEE Electron Device Letters
1 June 2004
Conference on Lasers and Electro-Optics
18 May 1997
