Our work in Optoelectronic Devices offers PARC partners the benefit of our deep understanding of the physics and material science behind Group III-Nitride (InGaAlN) semiconductors, which is foundational to our extensive experience in the design, growth, fabrication, and testing of nitride optical emitters and our strong record of device innovation.
PARC R&D work focuses on the identification of materials and device issues, alongside the invention of solutions, reduction to practice, demonstration of prototypes, and capture of intellectual property – as is demonstrated in our technical publications and awarded patents. Combined, this enables us to offer expertise, resources, and IP to clients seeking to commercialize products based on differentiated, market-destabilizing technology.
Since the introduction of our GaN MOCVD crystal-growth facility in 1994, we have been a leader in identifying and demonstrating novel ways of realizing the superior performance of nitride optical emitters. More recently, our scientists have pioneered the development of LEDs and lasers in the UV spectral range, with world-record-breaking device performances.
Our experience, resources and knowledge make it possible for us to innovate and improve the performance of solid state lighting and displays, and other closely related technologies, as well as to deliver high-performance visible and UV lasers for companies worldwide.
Our work is centered around a series of Focus Areas that we believe are the future of science and technology.
We’re continually developing new technologies, many of which are available for Commercialization.