Comparison of organic pulse-generator circuits for ferroelectric memories fabricated by all-additive printing
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2013 July 7-12; Villard-de-Lans (Grenoble area), France
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Comparison of organic pulse-generator circuits for ferroelectric memories fabricated by all-additive printing
Two pulse-generator circuits designed for writing non-volatile ferroelectric memory are fabricated by an all-additive inkjet process. One circuit is modeled on a traditional complementary design, while the second is based on a design methodology tailored for organic thin-film transistors through reduced device count and the use of a single device polarity. Both circuits are shown to successfully generate pulses that write the memory with a minimum voltage of 16 V.
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