Inkjet-patterned, organic complementary circuits and non-volatile memory arrays based on ferroelectric field-effect transistors

Details

Event

ECS Symposium on Thin Film Transistors

2010 Oct 10-15, Las Vegas, NV

Speakers

Tse Nga Ng
Sambandan, Sanjiv
Ana Claudia Arias
Event

Inkjet-patterned, organic complementary circuits and non-volatile memory arrays based on ferroelectric field-effect transistors

Organic complementary circuits are demonstrated for integration with mechanical sensors to enable the fabrication of a sensor tape to detect mechanical impacts correlated to traumatic brain injury. The control electronics were fabricated by inkjet patterning with p- and n-channel organic semiconductors and printed electrodes based on metal nanoparticles. Typical carrier mobilities for these printed TFTs are ~0.005-0.015 cm2/Vs for both semiconductors with current on-to-off ratios >10^4. The inverters showed a typical gain of 4 with VDD at 10V. The printed amplifiers are integrated with mechanical sensors consisted of ferroelectric polymers, and the acceleration sensor sensitivity is calibrated to be 2mV/g.

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