Optically pumped UV lasers grown on bulk AlN substrates
Details
Glasgow, UK. Date of Talk: 7/12/2011
Speakers
Northrup, John E.
Noble Johnson
Event
Optically pumped UV lasers grown on bulk AlN substrates
Optically pumped ultraviolet laser structures are demonstrated on low-defect-density bulk (0001) AlN substrates. The AlxGa1-xN/AlyGa1-yN hetero-structures were grown by metal-organic vapor phase epitaxy near atmospheric pressure. The hetero-structures included an AlN/AlGaN transition layer, n-AlGaN cladding layer, and AlGaN waveguide. The whole layer stack below the MQW region was designed for laser diodes emitting at 250 nm. The laser resonators with a length of about 1 mm were formed by cleaving the AlN crystal to obtain m-plane mirror facets. The facets were uncoated for the pump experiments. A KrF excimer laser with an emission wavelength of 248 nm was used as excitation source and focused to a stripe width of about 100 m. Lasing was achieved with different test structures with emission wavelengths in range of 291 nm to 279 nm. Lasing threshold pump-power densities as low as 600 kW/cm2 were recorded and the laser emission was found to be TE polarized.
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