Optically pumped UV lasers grown on bulk AlN substrates

Details

Glasgow, UK. Date of Talk: 7/12/2011
Event

Optically pumped UV lasers grown on bulk AlN substrates

Optically pumped ultraviolet laser structures are demonstrated on low-defect-density bulk (0001) AlN substrates. The AlxGa1-xN/AlyGa1-yN hetero-structures were grown by metal-organic vapor phase epitaxy near atmospheric pressure. The hetero-structures included an AlN/AlGaN transition layer, n-AlGaN cladding layer, and AlGaN waveguide. The whole layer stack below the MQW region was designed for laser diodes emitting at 250 nm. The laser resonators with a length of about 1 mm were formed by cleaving the AlN crystal to obtain m-plane mirror facets. The facets were uncoated for the pump experiments. A KrF excimer laser with an emission wavelength of 248 nm was used as excitation source and focused to a stripe width of about 100 m. Lasing was achieved with different test structures with emission wavelengths in range of 291 nm to 279 nm. Lasing threshold pump-power densities as low as 600 kW/cm2 were recorded and the laser emission was found to be TE polarized.

Additional information

Focus Areas

Our work is centered around a series of Focus Areas that we believe are the future of science and technology.

FIND OUT MORE
Licensing & Commercialization Opportunities

We’re continually developing new technologies, many of which are available for¬†Commercialization.

FIND OUT MORE
News

PARC scientists and staffers are active members and contributors to the science and technology communities.

FIND OUT MORE