Advances in group III-nitride-based deep UV light-emitting diode technology

Details

Event Semiconductor Science & Technology

Authors

Kneissl, Michael A.
Noble Johnson
Technical Publications
December 15th 2010
Applications for UV light emitting diodes (LEDs) are discussed and the state-of-the-art in the area of InAlGaN UV LED technology is being reviewed. Performance limiting factors for high efficiency UV LEDs are discussed and advances in the development of deep UV emitters are presented.

Citation

Kneissl, M. A.; Kolbe, T.; Chua, C. L.; Kuller, V.; Lobo, N.; Stellmach, J.; Knauer, A.; Rodriguez, H.; Einfeldt, E.; Yang, Z. H.; Johnson, N. M.; Weyers, M. Advances in group III-nitride-based deep UV light-emitting diode technology. Semiconductor Science & Technology. 2011 January; 26 (1): 014036.

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