Atomic layer deposition of Al2O3 for top-gated organic transistors

Atomic layer deposition (ALD) of thin film high-k oxides has been demonstrated for low voltage thin film transistors (TFT). However, for organic semiconductors, the transistors are based on a bottom-gate architecture. We have developed an oxide growth process for a top-gate transistor architecture for organic thin film semiconductors based on the ALD process, plasma-enhanced as well as thermal. The ALD growth process is self-limiting and this implies that the film thickness is dependent only on the number of deposition cycles. Practically, this creates accurate and uniform conformal thickness control over large areas. Furthermore, thickness control leads to good reproducibility and straightforward scale-up. We will discuss our low temperature (150C) Al2O3 growth process by plasma assisted-ALD compared to the thermal process. Also, oxide characterization as well as top-gated TFT performance will be presented.

Citation

Lavery, L. L.; Arias, A. C. Atomic layer deposition of Al2O3 for top-gated organic transistors. 2011 Materials Research Society Spring Meeting; 2011 April 25-29; San Francisco, CA.