Atomic layer dielectric deposition for flexible transistors

Details

Event 2012 Flexible Electronics & Displays Conference

Authors

Leah L Lavery
Lujan, Rene A.
Janos Veres
Technical Publications
February 9th 2012
Atomic layer deposition (ALD) of thin film high-k oxides has been demonstrated for low voltage thin film transistors (TFT). However, for organic semiconductors, the transistors are based on a bottom-gate architecture. We have developed an oxide growth process for a top-gate transistor architecture for organic thin film semiconductors based on the ALD process, plasma-enhanced as well as thermal. The ALD growth process is self-limiting and this implies that the film thickness is dependent only on the number of deposition cycles. Practically, this creates accurate and uniform conformal thickness control over large areas. Furthermore, thickness control leads to good reproducibility and straightforward scale-up. We will discuss our low temperature (150C) Al2O3 growth process by plasma assisted-ALD compared to the thermal process. Also, oxide characterization as well as top-gated TFT performance will be presented.

Citation

Lavery, L. L.; Lujan, R. A.; Veres, J. Atomic layer dielectric deposition for flexible transistors. 2012 Flexible Electronics & Displays Conference; 2012 February 6-9; Phoenix, AZ.

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