Coalescence during epitaxial lateral overgrowth of (Al,Ga)N(11.2) layers

Details

Event Journal of Crystal Growth

Authors

Andre Strittmatter
Teepe, Mark R.
Knollenberg, Clifford
Technical Publications
January 1st 2011
Epitaxial lateral overgrowth (ELOG) is reported for semi-polar (Al,Ga)N(11.2) layers on GaN/m-sapphire templates. The mask pattern consisted of periodic stripes of SiO2 oriented parallel to either the GaN[11.0] or the GaN[11.1] direction. Lateral growth occurred predominantly either unilaterally along GaN[11.1] or bi-laterally along GaN[11.0]. For growth along the [11.0]-direction, coalescence of the initial GaN domains was achieved for layer thicknesses > 4 m. However, planarization was not observed and, therefore, the resulting surface remained extremely corrugated. For lateral growth in [11.1]-direction, coalescence of initial GaN domains was delayed by a diminishing lateral growth rate as the domains converged. Insertion of an AlGaN layer during ELOG resulted in rapid coalescence to a contiguous layer. Superior crystal quality of such buffer layers as compared to conventional GaN buffer layers for the growth of InGaN/GaN quantum wells was demonstrated by photoluminescence spectroscopy.

Citation

Strittmatter, A.; Teepe, M. R.; Knollenberg, C.; Johnson, N. M. Coalescence during epitaxial lateral overgrowth of (Al,Ga)N(1 1.2) layers. Journal of Crystal Growth. 2011 January; 314 (1): 1-4.

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