Comparison of organic pulse-generator circuits for ferroelectric memories fabricated by all-additive printing

Details

Event 4th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors

Authors

Tse Nga Ng
Janos Veres
Krusor, Brent S.
Beverly Russo
Technical Publications
July 7th 2013
Two pulse-generator circuits designed for writing non-volatile ferroelectric memory are fabricated by an all-additive inkjet process. One circuit is modeled on a traditional complementary design, while the second is based on a design methodology tailored for organic thin-film transistors through reduced device count and the use of a single device polarity. Both circuits are shown to successfully generate pulses that write the memory with a minimum voltage of 16 V.

Citation

Schwartz, D. E.; Ng, T.; Veres, J.; Karlsson, C.; Broms, P.; Herlogsson, L.; Krusor, B. S.; Russo, B. Comparison of organic pulse-generator circuits for ferroelectric memories fabricated by all-additive printing. 4th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors; 2013 July 7-12; Villard-de-Lans, France

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