Degradation mechanisms of organic ferroelectric field-effect transistors used non-volatile memory

Details

Event Journal of Applied Physics

Authors

Tse Nga Ng
Beverly Russo
Ana Claudia Arias
Technical Publications
November 2nd 2009
Organic ferroelectric field-effect transistors were fabricated for use as non-volatile memory that retained 50% of current hysteresis over seven days. Hysteresis degradation was shown to originate from reductions in semiconductor mobility, dielectric capacitance, and shifts in transistor threshold voltages. The mobility decrease and the threshold-voltage shift were caused by dipolar alignment in the ferroelectric insulator, and the rate of change in gate capacitance is explained by the depolarization field in the ferroelectric dielectric. A method to calibrate and extract the input switching voltage is presented, and this calibration accounts for polarization loss with time and allows the ferroelectric transistors to be used as analog memories.

Citation

Ng, T.; Russo, B.; Arias, A. C. Degradation mechanisms of organic ferroelectric field-effect transistors used as non-volatile memory. Journal of Applied Physics. 2009 November 5; 106 (9): 094504.

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