Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells

Details

Event Applied Physics Letters

Authors

Northrup, John E.
Noble Johnson
Kneissl, Michael A.
Technical Publications
January 9th 2012
For AlGaN-based multi-quantum-well light emitters grown on c-plane substrates there is a tendency for the polarization of the emitted light to switch from transverse electric (TE) polarization to transverse magnetic (TM) polarization as the wavelength decreases. This transition depends on various factors that include the strain in the quantum well. Experimental results are presented that illustrate the phenomenon for nitride LEDs grown on sapphire and on bulk AlN. Model calculations are presented which quantify the dependence of the TE/TM switch on the quantum well strain and the Al composition in the barriers surrounding the well.

Citation

Northrup, J. E.; Chua, C. L.; Yang, Z.; Wunderer, T.; Johnson, N. M.; Kneissl, M. A. ; Kolbe T. Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells. Applied Physics Letters. 2012 January 9; 100 (2): 021101.

Additional information

Focus Areas

Our work is centered around a series of Focus Areas that we believe are the future of science and technology.

FIND OUT MORE
Licensing & Commercialization Opportunities

We’re continually developing new technologies, many of which are available for¬†Commercialization.

FIND OUT MORE
News

PARC scientists and staffers are active members and contributors to the science and technology communities.

FIND OUT MORE