Electrical stability of inkjet-patterned organic complementary inverters measured in ambient conditions

Details

Event Applied Physics Letters

Authors

Tse Nga Ng
Sambandan, Sanjiv
Lujan, Rene A.
Ana Claudia Arias
Technical Publications
June 10th 2009
Complementary organic inverters comprising p- and n-type semiconductors and inorganic-organic bilayer dielectrics were fabricated by inkjet patterning of both the metal contacts and the semiconductors. Bottom-gate bottom-contact organic thin-film transistors with Ta gates, Ta2O5-polymer bilayer dielectrics, inkjet-printed Ag source-drain contacts, and inkjet-printed p-channel (pBTTT) and n-channel (perylene) semiconductors exhibit hole and electron mobilities as high as ~ 10-2 cm2/Vs. Complementary inverters based on these TFTs operate in ambient and exhibit a gain of -4.4 with VDD=+20V and -3dB cutoff at 100 kHz with a load of 0.02 pF. The electrical stability of the complementary inverters was evaluated for analog and digital operations, and a noise margin 1.1V at VDD=+15V was measured when including p- and n-channel TFT bias stress.

Citation

Ng, T.; Sambandan, S.; Lujan, R. A.; Arias, A. C.; Newman, C.; Yan, H.; Fachetti, A. Electrical stability of inkjet-patterned organic complementary inverters measured in ambient conditions. Applied Physics Letters. 2009 June 10; 94 (23): 233307.

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