High gain amplifiers with amorphous silicon thin film transistors

Details

Event IEEE Electron Device Letters

Authors

Sambandan, Sanjiv
Technical Publications
August 1st 2008
This letter demonstrates amplifier design with amorphous hydrogenated silicon (a-Si:H) thin film transistors (TFTs) for high dc gain. High dc gain is achieved by the use of positive feedback to improve load impedance. The transfer characteristics of the amplifier are resistant to threshold voltage shift in the TFTs.

Citation

Sambandan, S. High gain amplifiers with amorphous silicon thin film transistors. IEEE Electron Device Letters. 2008 August; 29 (8): 882.

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