In-well pumped blue GaN-based vertical-external-cavity surface-emitting lasers

Details

Event Japanese Journal of Applied Physics, a special issue on Recent Advances in Nitride Semiconductors

Authors

Northrup, John E.
Teepe, Mark R.
Noble Johnson
Technical Publications
May 31st 2013
We describe the properties of in-well pumped blue InGaN/GaN vertical-external-cavity surface-emitting lasers. The laser hetero-structures were deposited on bulk GaN substrates by using metalorganic vapor phase epitaxy near atmospheric pressure. The active zones are comprised of up to 20 InGaN quantum wells distributed in a resonant periodic gain configuration. High-reflectivity dielectric distributed Bragg-reflectors were used as mirrors. Lasing was achieved at a wavelength of about 440445 nm by exclusively exciting the quantum wells with the 384 nm emission line of a dye/N2 laser. The laser threshold was about 240 kW/cm2. The small pump spot diameter of about 20 m and the usage of dielectric mirrors result in a rather high thermal resistance, which was experimentally determined by using an all optical measurement technique based on the temperature-dependent change of the refractive index of the device.

Citation

Wunderer, T.; Northrup, J. E.; Yang, Z.; Teepe, M. R.; Johnson, N. M.; Rotella, P.; Wraback, M. In-well pumped blue GaN-based vertical-external-cavity surface-emitting lasers. Japanese Journal of Applied Physics. 2013 August; 52 (8): 08JG11.

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