In-well pumping of InGaN/GaN vertical-external-cavity surface-emitting lasers

In-well pumping of blue InGaN/GaN vertical-external-cavity surface-emitting lasers are demonstrated. The laser structures were grown on bulk GaN substrates by using metal-organic vapor phase epitaxy near atmospheric pressure. The active zone consisted of up to 20 InGaN quantum wells distributed in a resonant periodic gain configuration. High-reflectivity dielectric distributed Bragg-reflectors were used as mirrors. Laser emission with a single longitudinal mode at 440 nm was achieved by exclusively pumping the quantum wells with the 384 nm emission line of a dye-/N2-laser.

Citation

Wunderer, T.; Northrup, J. E.; Yang, Z.; Teepe, M. R.; Strittmatter, A.; Johnson, N. M.; Rotella, P.; Wraback, M. In-well pumping of InGaN/GaN vertical-external-cavity surface-emitting lasers. Applied Physics Letters. 2011 November; 99 (20): 201109.