InAlGaN optical emitters: laser diodes with non-epitaxial cladding layers and ultraviolet light-emitting diodes

Details

Event Invited talk at Gallium Nitride Materials & Devices VI, SPIE Photonics West 2011

Authors

Knollenberg, Clifford
Teepe, Mark R.
Andre Strittmatter
Technical Publications
January 24th 2011
We describe recent work on nitride lasers and LEDs at PARC. The presentation includes InGaN laser diodes in which the usual epitaxial upper cladding layer is replaced with an evaporated material, such as silver. We also describe InGaN LEDs and optically-pumped 500 nm lasers grown on 2 inch semi-polar (1122) GaN on m-plane sapphire substrates. The presentation also includes results on AlGaN UV LEDs. Unpackaged = 325 nm LEDs of 300 m square sizes exhibit maximum output powers of 13 mW, while 300 m X 1 mm, = 290 nm devices show maximum output powers of 1.6 mW.

Citation

Chua, C. L.; Yang, Z. H.; Knollenberg, C.; Teepe, M. R.; Cheng, B.; Strittmatter, A.; Bour, D. P.; Johnson, N. M. InAlGaN optical emitters: laser diodes with non-epitaxial cladding layers and ultraviolet light-emitting diodes. Gallium Nitride Materials & Devices VI at SPIE Photonics West 2011; 2011 January 22-27, San Francisco, CA. SPIE Proceedings 7939: 793918.

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