Organic inkjet-patterned memory array based on ferroelectric field-effect transistors

An inkjet-patterned, flexible organic memory array was demonstrated using non-volatile ferroelectric field-effect transistors which remained functional below 0.6% tensile strain. Each memory cell consisted of an addressing transistor and a ferroelectric memory transistor. Less than 20% cross-talk was observed between neighboring cells, and binary memory states in a 7x8 array were retained for at least eight hours. Variations among the printed memory transistors were characterized and shown to be caused by different rates of charge trapping in the semiconductor-ferroelectric interface.

Citation

Ng, T.; Russo, B.; Krusor, B. S.; Kist, R.; Arias, A. C. Organic inkjet-patterned memory array based on ferroelectric field-effect transistors. Organic Electronics. 2011 December; 12 (12): 2012-2018.