Self-stabilization in amorphous silicon circuits

Details

Event IEEE Electron Device Letters

Authors

Sambandan, Sanjiv
Street, Robert A.
Technical Publications
January 1st 2009
Thin film transistors (TFTs) based on disordered semiconductors such as amorphous hydrogenated silicon(a-Si:H) experience a threshold voltage shift (VT shift) with time in the presence of a gate bias. The VT shift needs to be compensated for in TFT circuits. We study an interesting property of self compensation in fundamental analog TFT circuits with one a part of the circuit compensating for the effects of VT shift in the other and vice-versa.

Citation

Sambandan, S.; Street, R. A. Self-stabilization in amorphous silicon circuits. IEEE Electron Device Letters. 2009 January; 30 (1): 45-47.

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