Structural and optical characterization of AlGaN multiple quantum wells grown on semipolar (20-21) bulk AlN substrate

Heterostructures of AlGaN with multiple quantum wells were grown by MOVPE on semipolar (20-21) bulk AlN substrates. Smooth epitaxial surfaces with excellent heterostructure interfaces were demonstrated. Luminescence from the AlGaN multiple quantum wells emitting at ? = 237nm show a substantial degree of polarization of about 35% as determined by low-temperature photoluminescence measurements.??

Citation

Wunderer, T.; Yang, Z.; Feneberg, M.; Batres, M.; Teepe, M. R.; Johnson, N. M. Structural and optical characterization of AlGaN multiple quantum wells grown on semipolar (20-21) bulk AlN substrate. Applied Physics Letters.