Structural and optical characterization of AlGaN multiple quantum wells grown on semipolar (20-21) bulk AlN substrate

Details

Event Applied Physics Letters

Authors

Max Batres
Teepe, Mark R.
Noble Johnson
Technical Publications
September 11th 2017
Heterostructures of AlGaN with multiple quantum wells were grown by MOVPE on semipolar (20-21) bulk AlN substrates. Smooth epitaxial surfaces with excellent heterostructure interfaces were demonstrated. Luminescence from the AlGaN multiple quantum wells emitting at ? = 237nm show a substantial degree of polarization of about 35% as determined by low-temperature photoluminescence measurements.??

Citation

Wunderer, T.; Yang, Z.; Feneberg, M.; Batres, M.; Teepe, M. R.; Johnson, N. M. Structural and optical characterization of AlGaN multiple quantum wells grown on semipolar (20-21) bulk AlN substrate. Applied Physics Letters.

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