Structural characterization of thick (1122) GaN layers grown by HVPE on m-plane sapphire

Details

Event physica status solidi (a)

Authors

Andre Strittmatter
Noble Johnson
Technical Publications
May 26th 2010
This paper reports structural characterization of thick equation image-oriented GaN layers by means of XRD, TEM, and micro- CL. The semi-polar equation image GaN layers were grown on m-plane sapphire substrates by HVPE. Their structural quality improved with thickness. Threading dislocation density of 3108cm2 and stacking faults density of 4104cm1 were measured at the surface of 20m thick equation image GaN layers. The semi-polar GaN layers were used as template substrates to grow InGaN/GaN MQW heterostructures by MOCVD that demonstrated optically pumped lasing at 500 nm wavelength. The results demonstrate the longest wavelength yet reported for a photo-pumped laser on template substrates.

Citation

Usikov, A.; Shapovalova, L.; Strittmatter, A.; Johnson, N. M.; Ivantsov, V.; Syrkin, A.; Soukhoveev, V.; Scanlan, B.; Zheng, J. G.; Spiberg, P.; El-Ghoroury, H. Structural characterization of thick (1122) GaN layers grown by HVPE on m-plane sapphire. physica status solidi (a). 2010 June; 207 (6): 1295-1298.

Additional information

Focus Areas

Our work is centered around a series of Focus Areas that we believe are the future of science and technology.

FIND OUT MORE
Licensing & Commercialization Opportunities

We’re continually developing new technologies, many of which are available for Commercialization.

FIND OUT MORE
News

PARC scientists and staffers are active members and contributors to the science and technology communities.

FIND OUT MORE