Sub-300 nm UV LEDs with defect reduction layer and vertical-injection architecture

We present UV LEDs operating at wavelengths below 300 nm. The heterostructure features a defect reduction layer that bends threading dislocations away from the active region. Vertical-injection structures were fabricated via laser lift-off.

Citation

Chua, C. L.; Yang, Z. H.; Knollenberg, C.; Teepe, M. R.; Johnson, N. M. Sub-300 nm UV LEDs with defect reduction layer and vertical-injection architecture. Conference on Laser and Electro-Optics (CLEO 2011); 2011 May 1-6; Baltimore, MD. Article #5950686.